Modern Semiconductor Devices for Integrated Circuits
by Hu, Chenming C.Edition: 1st
Format: Hardcover
Pub. Date: 2009-03-22
Publisher(s): Pearson
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Summary
Modern Semiconductor Devices for Integrated Circuits, First Editionintroduces students to the world of modern semiconductor devices with an emphasis on integrated circuit applications. MARKET: Written by an experienced teacher, researcher, and expert in industry practices, this succinct and forward-looking text is appropriate for anyone interested in semiconductor devices for integrated curcuits, and serves as a suitable reference text for practicing engineers.
Author Biography
Chenming Calvin Hu holds the TSMC Distinguished Professor Chair of Microelectronics at University of California, Berkeley. He is a member of the US Academy of Engineering and a foreign member of the Chinese Academy of Sciences. From 2001 to 2004, he was the Chief Technology Officer of TSMC. A Fellow of the Institute of Electrical and Electronic Engineers (IEEE), he has been honored with the Jack Morton Award in1997 for his research on transistor reliability, the Solid State Circuits Award in 2002 for co-developing the first international standard transistor model for circuit simulation, and the Jun-ichi Nishizawa Medal in 2009 for exceptional contributions to device physics and scaling. He has supervised over 60 Ph.D. student theses, published 800 technical articles, and received more than 100 US patents. His other honors include Sigma Xi Moni Ferst Award, R&D 100 Award, and UC Berkeley’s highest award for teaching — the Berkeley Distinguished Teaching Award.
For additional information, visit the author's Web site.Table of Contents
| Preface | p. xiii |
| About the Author | p. xv |
| Electrons and Holes in Semiconductors | p. 1 |
| Silicon Crystal Structure | p. 1 |
| Bond Model of Electrons and Holes | p. 4 |
| Energy Band Model | p. 8 |
| Semiconductors, Insulators, and Conductors | p. 11 |
| Electrons and Holes | p. 12 |
| Density of States | p. 15 |
| Thermal Equilibrium and the Fermi Function | p. 16 |
| Electron and Hole Concentrations | p. 19 |
| General Theory of n and p | p. 25 |
| Carrier Concentrations at Extremely High and Low Temperatures | p. 28 |
| Chapter Summary | p. 29 |
| Problems | p. 30 |
| References | p. 33 |
| General References | p. 34 |
| Motion and Recombination of Electrons and Holes | p. 35 |
| Thermal Motion | p. 35 |
| Drift | p. 38 |
| Diffusion Current | p. 46 |
| Relation Between the Energy Diagram and V, E | p. 47 |
| Einstein Relationship Between D and ¿ | p. 48 |
| Electron-Hole Recombination | p. 50 |
| Thermal Generation | p. 52 |
| Quasi-Equilibrium and Quasi-Fermi Levels | p. 52 |
| Chapter Summary | p. 54 |
| Problems | p. 56 |
| References | p. 58 |
| General References | p. 58 |
| Device Fabrication Technology | p. 59 |
| Introduction to Device Fabrication | p. 60 |
| Oxidation of Silicon | p. 61 |
| Lithography | p. 64 |
| Pattern Transfer-Etching | p. 68 |
| Doping | p. 70 |
| Dopant Diffusion | p. 73 |
| Thin-Film Deposition | p. 75 |
| Interconnect-The Back-End Process | p. 80 |
| Testing, Assembly, and Qualification | p. 82 |
| Chapter Summary-A Device Fabrication Example | p. 83 |
| Problems | p. 85 |
| References | p. 87 |
| General References | p. 88 |
| PN and Metal-Semiconductor Junctions | p. 89 |
| PN Junction | p. 89 |
| Building Blocks of the PN Junction Theory | p. 90 |
| Depletion-Layer Model | p. 94 |
| Reverse-Biased PN Junction | p. 97 |
| Capacitance-Voltage Characteristics | p. 98 |
| Junction Breakdown | p. 100 |
| Carrier Injection Under Forward Bias-Quasi-Equilibrium Boundary Condition | p. 105 |
| Current Continuity Equation | p. 107 |
| Excess Carriers in Forward-Biased PN Junction | p. 109 |
| PN Diode IV Characteristics | p. 112 |
| Charge Storage | p. 115 |
| Small-Signal Model of the Diode | p. 116 |
| Application to Optoelectronic Devices | p. 117 |
| Solar Cells | p. 117 |
| Light-Emitting Diodes and Solid-State Lighting | p. 124 |
| Diode Lasers | p. 128 |
| Photodiodes | p. 133 |
| Metal-Semiconductor Junction | p. 133 |
| Schottky Barriers | p. 133 |
| Thermionic Emission Theory | p. 137 |
| Schottky Diodes | p. 138 |
| Applications of Schottky Diodes | p. 140 |
| Quantum Mechanical Tunneling | p. 141 |
| Ohmic Contacts | p. 142 |
| Chapter Summary | p. 145 |
| Problems | p. 148 |
| References | p. 156 |
| General References | p. 156 |
| Mos Capacitor | p. 157 |
| Flat-Band Condition and Flat-Band Voltage | p. 158 |
| Surface Accumulation | p. 160 |
| Surface Depletion | p. 161 |
| Threshold Condition and Threshold Voltage | p. 162 |
| Strong Inversion Beyond Threshold | p. 164 |
| MOS C-V Characteristics | p. 168 |
| Oxide Charge-A Modification to Vfb and Vt | p. 172 |
| Poly-Si Gate Depletion-Effective Increase in Tox | p. 174 |
| Inversion and Accumulation Charge-Layer Thicknesses-Quantum Mechanical Effect | p. 176 |
| CCD Imager and CMOS Imager | p. 179 |
| Chapter Summary | p. 184 |
| Problems | p. 186 |
| References | p. 193 |
| General References | p. 193 |
| MOS Transistor | p. 195 |
| Introduction to the MOSFET | p. 195 |
| Complementary MOS (CMOS) Technology | p. 198 |
| Surface Mobilities and High-Mobility FETs | p. 200 |
| MOSFET Vt Body Effect, and Steep Retrograde Doping | p. 207 |
| QINV in MOSFET | p. 209 |
| Basic MOSFET IV Model | p. 210 |
| CMOS Inverter-A Circuit Example | p. 214 |
| Velocity Saturation | p. 219 |
| MOSFET IV Model with Velocity Saturation | p. 220 |
| Parasitic Source-Drain Resistance | p. 225 |
| Extraction of the Series Resistance and the Effective Channel Length | p. 226 |
| Velocity Overshoot and Source Velocity Limit | p. 228 |
| Output Conductance | p. 229 |
| High-Frequency Performance | p. 230 |
| MOSFET Noises | p. 232 |
| SRAM, DRAM, Nonvolatile (Flash) Memory Devices | p. 238 |
| Chapter Summary | p. 245 |
| Problems | p. 247 |
| References | p. 256 |
| General References | p. 257 |
| MOSFETs in ICs-Scaling, Leakage, and Other Topics | p. 259 |
| Technology Scaling-For Cost, Speed, and Power Consumption | p. 259 |
| Subthreshold Current-"Off" Is Not Totally "Off" | p. 263 |
| Vt Roll-Off-Short-Channel MOSFETs Leak More | p. 266 |
| Reducing Gate-Insulator Electrical Thickness and Tunneling Leakage | p. 270 |
| How to Reduce Wdep | p. 272 |
| Shallow Junction and Metal Source/Drain MOSFET | p. 274 |
| Trade-Off Between Ion and Ioff and Design for Manufacturing | p. 276 |
| Ultra-Thin-Body SOI and Multigate MOSFETs | p. 277 |
| Output Conductance | p. 282 |
| Device and Process Simulation | p. 283 |
| MOSFET Compact Model for Circuit Simulation | p. 284 |
| Chapter Summary | p. 285 |
| Problems | p. 286 |
| References | p. 288 |
| General References | p. 289 |
| Bipolar Transistor | p. 291 |
| Introduction to the BJT | p. 291 |
| Collector Current | p. 293 |
| Base Current | p. 297 |
| Current Gain | p. 298 |
| Base-Width Modulation by Collector Voltage | p. 302 |
| Ebers-Moll Model | p. 304 |
| Transit Time and Charge Storage | p. 306 |
| Small-Signal Model | p. 310 |
| Cutoff Frequency | p. 312 |
| Charge Control Model | p. 314 |
| Model for Large-Signal Circuit Simulation | p. 316 |
| Chapter Summary | p. 318 |
| Problems | p. 319 |
| References | p. 323 |
| General References | p. 323 |
| Derivation of the Density of States | p. 325 |
| Derivation of the Fermi-Dirac Distribution Function | p. 329 |
| Self-Consistencies of Minority Carrier Assumptions | p. 333 |
| Answers to Selected Problems | p. 337 |
| Index | p. 341 |
| Table of Contents provided by Ingram. All Rights Reserved. |
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