Fundamentals of Semiconductor Physics and Devices,9789810223878

Fundamentals of Semiconductor Physics and Devices

by
ISBN13: 9789810223878
ISBN10: 9810223870
Format: Hardcover
Pub. Date: 1997-02-01
Publisher(s): WORLD SCIENTIFIC PUB CO INC
List Price: $142.80

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Summary

Exposes readers to device principles and recent developments and offers a thorough grounding in the physical principles of semiconductors. Covers electronic structure of ideal crystals, and electronic system in thermodynamic equilibrium.

Table of Contents

1 Characterization of semiconductors
1(50)
1.1 Introduction
1(4)
1.2 Atomic structure of ideal crystals
5(23)
1.2.1 Crystal lattices
6(6)
1.2.2 Point groups of equivalent directions and crystal classes
12(2)
1.2.3 Space groups and crystal structures
14(2)
1.2.4 Cubic semiconductor structures
16(6)
1.2.5 Hexagonal semiconductor structures
22(6)
1.3 Chemical nature of semiconductors. Material classes
28(5)
1.3.1 Group IV elemental semiconductors
29(1)
1.3.2 III-V semiconductors
30(1)
1.3.3 II-VI semiconductors
31(1)
1.3.4 Group VI elemental semiconductors
31(1)
1.3.5 IV-VI semiconductors
32(1)
1.3.6 Other compound semiconductors
32(1)
1.4 Macroscopic properties and their microscopic implications
33(18)
1.4.1 Electrical conductivity
34(1)
1.4.2 Dependence of conductivity on the semiconductor state
35(3)
1.4.3 Optical absorption spectrum and the band model of semiconductors
38(3)
1.4.4 Electrical conductivity in the band model
41(4)
1.4.5 The Hall effect and the existence of positively charged freely mobile carriers
45(4)
1.4.6 Semiconductors far from thermodynamic equilibrium
49(2)
2 Electronic structure of ideal crystals
51(174)
2.1 Atomic cores and valence electrons
51(3)
2.2 The dynamical problem
54(28)
2.2.1 Schrodinger equation for the interacting core and valience electron system
54(3)
2.2.2 Adiabatic approximation. Lattice dynamics
57(9)
2.2.3 One-particle approximation. One-particle Schrodinger equation
66(16)
2.3 General properties of stationary one-electron states in a crystal
82(16)
2.3.1 Symmetry properties of the one-electron Schrodinger equation
82(3)
2.3.2 Bloch theorem
85(4)
2.3.3 Reciprocal vector space and the reciprocal lattice
89(5)
2.3.4 Relation between energy eigenvalues and quasi-wavevector
94(4)
2.4 Schrodinger equation solution in the nearly-free-electron approximation
98(7)
2.4.1 Non-degenerate perturbation theory
100(3)
2.4.2 Degenerate perturbation theory
103(2)
2.5 Band structure
105(35)
2.5.1 Brillouin zones
105(11)
2.5.2 Degeneracy of energy bands
116(3)
2.5.3 Critical points and effective masses
119(4)
2.5.4 Density of states
123(5)
2.5.5 Spin
128(5)
2.5.6 Calculational methods for band structure determination
133(7)
2.6 Tight binding approximation
140(39)
2.6.1 Fundamentals
140(8)
2.6.2 TB theory of diamond and zincblende type semiconductors
148(17)
2.6.3 sp(3)-hybrids, total energy and chemical bonding
165(14)
2.7 k.p-method
179(32)
2.7.1 Fundamentals
179(5)
2.7.2 Valence bands of diamond structure semiconductors without spin-orbit interaction
184(5)
2.7.3 Luttinger-Kohn model
189(11)
2.7.4 Kane model
200(11)
2.8 Band structure of important semiconductors
211(14)
2.8.1 Silicon
212(6)
2.8.2 Germanium
218(1)
2.8.3 III-V semiconductors
219(2)
2.8.4 IV-VI semiconductors
221(3)
2.8.5 IV-VI semiconductors
224(1)
2.8.6 Tellurium and selenium
224(1)
3 Electronic structure of semiconductor crystals with perturbations
225(232)
3.1 Atomic structure of real semiconductor crystals
226(15)
3.1.1 Classification of perturbations
226(1)
3.1.2 Point perturbations
227(8)
3.1.3 Formation of point perturbations and their movement
235(5)
3.1.4 Line and planar defects
240(1)
3.2 One-electron Schrodinger equation for point perturbations
241(11)
3.2.1 Electron-core interaction
242(3)
3.2.2 Electron-electron interaction
245(7)
3.3 Effective mass equation
252(13)
3.3.1 Effective mass equation for a single band
253(6)
3.3.2 Multiband effective mass equation
259(6)
3.4 Shallow levels. Donor and acceptor states
265(16)
3.4.1 Hydrogen model
266(5)
3.4.2 Improvements upon the hydrogen model
271(10)
3.5 Deep levels
281(53)
3.5.1 General characterization of deep levels
281(4)
3.5.2 Defect molecule model
285(8)
3.5.3 Solution methods for the one-electron Schrodinger equation of a crystal with a point perturbation
293(8)
3.5.4 Correlation effects
301(7)
3.5.5 Results for selected deep centers
308(26)
3.6 Clean semiconductor surfaces
334(54)
3.6.1 The concept of clean surfaces
334(2)
3.6.2 Atomic structure of clean surfaces
336(18)
3.6.3 Electronic Structure of crystals with a surface
354(17)
3.6.4 Atomic and electronic structure of particular surfaces
371(17)
3.7 Semiconductor microstructures
388(45)
3.7.1 Heterojunctions
388(8)
3.7.2 Microstructures: Fabrication, classifications, examples
396(13)
3.7.3 Methods for electronic structure calculations
409(11)
3.7.4 Electronic structure of particular microstructures
420(13)
3.8 Macroscopic electric fields
433(10)
3.8.1 Effective mass equation and stationary electron states
434(3)
3.8.2 Non-stationary states. Bloch oscillations
437(3)
3.8.3 Interband tunneling
440(2)
3.8.4 Photon assisted interband tunneling
442(1)
3.9 Macroscopic magnetic fields
443(14)
3.9.1 Effective mass equation in a magnetic field
444(8)
3.9.2 Solution of the effective mass equation
452(5)
4 Electron system in thermodynamic equilibrium
457(42)
4.1 Fundamentals of the statistical description
457(3)
4.2 Calculation of average particle numbers
460(9)
4.2.1 Configuration-independent one-particle states
460(2)
4.2.2 Configuration-dependent one-particle states
462(7)
4.3 Density of states
469(8)
4.3.1 Total electron concentration
469(1)
4.3.2 Density of states of ideal semiconductors
470(4)
4.3.3 Density of states of real semiconductors
474(3)
4.4 Free carrier concentrations
477(22)
4.4.1 Conservation of total electron number
477(1)
4.4.2 Free carrier concentration dependence on Fermi energy. Law of mass action
478(4)
4.4.3 Intrinsic semiconductors
482(2)
4.4.4 Extrinsic semiconductors
484(5)
4.4.5 Compensation of donors and acceptors
489(3)
4.4.6 More complex cases
492(7)
5 Non-equilibrium processes in semiconductors
499(36)
5.1 Fundamentals of the statistical description of non-equilibrium processes
500(5)
5.2 Systematics of non-equilibrium processes in semiconductors
505(4)
5.2.1 Temporal inhomogeneity and spatial homogeneity
505(1)
5.2.2 Spatial inhomogeneity and temporal homogeneity
506(2)
5.2.3 Space and time inhomogeneities
508(1)
5.3 Generation and annihilation of free charge carriers
509(14)
5.3.1 Generation processes
510(1)
5.3.2 Unipolar annihilation of free charge carriers: capture at deep centers
511(6)
5.3.3 Bipolar annihilation of carriers at deep centers
517(6)
5.4 Drift current
523(4)
5.5 Diffusion and annihilation of free carriers
527(3)
5.6 Equilibrium of free carriers in inhomogeneously doped semiconductors
530(5)
6 Semiconductor junctions in thermodynamic equilibrium
535(38)
6.1 pn-junction
537(12)
6.1.1 Establishment of thermodynamic equilibrium
539(2)
6.1.2 Diffusion voltage
541(1)
6.1.3 Spatial variation of the electric and chemical potentials: Schottky approximation
542(7)
6.2 Heterojunctions
549(8)
6.2.1 Equilibrium condition
550(2)
6.2.2 Electrostatic potential. GaAs Ga(1-x)Al(x)A(s) heterojunction as an example
552(5)
6.3 Metal-semiconductor junctions
557(10)
6.3.1 Energy level diagram before establishing equilibrium
557(2)
6.3.2 Electrostatic potential
559(4)
6.3.3 Schottky barrier
563(4)
6.4 Insulator-semiconductor junctions
567(6)
6.4.1 Thermodynamic equilibrium
567(3)
6.4.2 Influence of interface states
570(2)
6.4.3 Semiconductor surfaces
572(1)
7 Semiconductor junctions under non-equilibrium conditions
573(50)
7.1 pn-junction in an external voltage
574(21)
7.1.1 Electrostatic potential profile
576(1)
7.1.2 Mechanism of current transport through a pn-junction
577(3)
7.1.3 Chemical potential profiles for electrons and holes
580(3)
7.1.4 Dependence of current density on voltage
583(2)
7.1.5 Bipolar transistor
585(8)
7.1.6 Tunnel diode
593(2)
7.2 pn-junction in interaction with light
595(11)
7.2.1 Photoeffect at a pn-junction. Photodiode and photovoltaic element
595(4)
7.2.2 Laser diode
599(7)
7.3 Metal-semiconductor junction in an external voltage. Rectifiers
606(6)
7.4 Insulator-semiconductor junction in an external voltage
612(11)
7.4.1 Field effect
612(2)
7.4.2 Inversion layers
614(6)
7.4.3 MOSFET
620(3)
Appendices
A Group theory for applications in semiconductor physics
623(114)
A.1 Definitions and concepts
623(4)
A.1.1 Group definition
623(1)
A.1.2 Concepts
624(3)
A.2 Rigid displacements
627(8)
A.2.1 Definition
627(1)
A.2.2 Translations
628(1)
A.2.3 Orthogonal transformations
629(2)
A.2.4 Geometrical interpretation
631(1)
A.2.5 Screw rotations and glide reflections
632(3)
A.3 Translation, point and space groups
635(20)
A.3.1 Lattice translation groups
635(1)
A.3.2 Point groups
636(18)
A.3.3 Space groups
654(1)
A.4 Representations of groups
655(18)
A.4.1 Introduction
655(6)
A.4.2 Irreducible representations
661(6)
A.4.3 Products of representations
667(6)
A.5 Representations of the full rotation group
673(9)
A.5.1 Vector representation of the rotation group and generators of infinitesimal rotations
674(2)
A.5.2 Representations for dimensions other than three
676(6)
A.6 Spinor representations
682(5)
A.6.1 Space-dependent spinors
682(1)
A.6.2 Representation D(1 2)
683(1)
A.6.3 Irreducible spinor representations
684(1)
A.6.4 Double group method
685(2)
A.7 Projective representations
687(5)
A.7.1 Factor systems
687(2)
A.7.2 Definitions and theorems
689(3)
A.7.3 Construction of projective representations
692(1)
A.8 Time reversal symmetry
692(5)
A.8.1 Time reversal operator
693(1)
A.8.2 Additional degeneracies of energy eigenvalues
694(3)
A.8.3 Additional selection rules for matrix elements
697(1)
A.9 Irreducible representations of space groups
698(14)
A.9.1 Representations of translation groups
698(2)
A.9.2 Star of wavevectors
700(2)
A.9.3 Small point groups and their projective representations
702(2)
A.9.4 Representations of the full space group
704(2)
A.9.5 Spinor representations of space groups
706(1)
A.9.6 Implications of time reversal symmetry
707(5)
A.9.7 Compatibility
712(1)
A.10 Irreducible representations of small point groups
712(25)
A.10.1 Character tables
712(19)
A.10.2 Multiplication tables
731(3)
A.10.3 Compatibility relations
734(3)
B Corrections to the adiabatic approximation
737(4)
C Occupation number representation
741(6)
Bibliography 747(10)
Index 757

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