Bioelectronics : A Handbook of Devices and Mechanisms in Electronics and Biology

by ; ;
Format: Hardcover
Pub. Date: 1998-03-01
Publisher(s): McGraw-Hill
List Price: $93.98

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Summary

Handbook deals with the design of neural networks & biosensors, explaining the analogies & differences between microelectronic technologies & natural systems as it covers everything from basic bioelectronic concepts, to the development of neural chips, to the building of biosensors & neural networks. DLC: Molecular electronics.

Table of Contents

Preface xi(2)
Acknowledgments xiii
Part 1 Basic Properties of Silicon 3(78)
Chapter 1. Semiconductor Materials
3(18)
1.1. Chemical and Physical Bonds
3(1)
1.2. Electronic Orbitals
4(10)
1.3. Energy Bands in Metals and Semiconductors
14(5)
Problems
19(1)
References
19(2)
Chapter 2. Semiconductors and Charge Carriers
21(24)
2.1. Optical Properties of Semiconductors
21(5)
2.2. Thermal Excitation of Valence Electrons
26(1)
2.3. Fermi-Dirac Distribution
27(5)
2.4. Charge Concentrations in Intrinsic Semiconductors
32(2)
2.5. Effective Mass
34(1)
2.6. Doped Semiconductors
35(5)
2.7. A Simplified Introduction to the Generation-Recombination Processes
40(3)
Problems
43(1)
References
44(1)
Chapter 3. Carrier Motion in Semiconductors
45(36)
3.1. Carrier Motion
45(1)
3.2. Carrier Motion by Drift
46(8)
3.3. Carrier Motion by Diffusion
54(4)
3.4. Transport Equations
58(2)
3.5. Boltzman Transport Equation
60(3)
3.6. Recombination-Generation Processes in Semiconductors
63(8)
3.7. Continuity Equation
71(4)
3.8. Hall Effect
75(1)
Problems
76(1)
References
78(2)
Part 2 Basic Properties of Biological Molecules 81(54)
Chapter 4. Biological Materials
81(28)
4.1. Physical Bonds Revisited
81(3)
4.2. Water and Electrolyte Solutions
84(5)
4.3. Optical Properties of Molecules in Solution
89(3)
4.4. Biological Molecules--Proteins
92(4)
4.5. Nucleic Acids
96(3)
4.6. Phospholipids Organization
99(1)
4.7. Cell Membrane
99(6)
4.8. An Overview of the Eucaryotic Cell
105(1)
Problems
106(1)
References
107(2)
Chapter 5. Motion in Solution and Chemical Reactions
109(26)
5.1. Diffusion in Solution
109(5)
5.2. Brownian Motion
114(3)
5.3. Electrophoresis
117(4)
5.4. Chemical Reactions
121(9)
Problems
130(1)
References
130(5)
Part 3 Junctions and Membranes 135(76)
Chapter 6. Semiconductor Junctions
135(42)
6.1. pn Junction
135(1)
6.2. pn Junction in Equilibrium
136(12)
6.3. pn Junction in Nonequilibrium: Effect of the Bias Voltage
148(1)
6.4. Current-Voltage Characteristics of the pn Junction
149(8)
6.5. Charge Storage in the pn Junction
157(3)
6.6. Transient Behavior of the pn Junction
160(1)
6.7. Considerations on the Ideal pn Junction
160(1)
6.8. Reverse Bias: Deviations from the Ideal Diode Behavior
161(2)
6.9. Forward Bias: Deviations from the Ideal Diode Behavior
163(4)
6.10. pn Junction (Diode) Models
167(2)
6.11. MS Junction
169(5)
Problems
174(1)
References
175(2)
Chapter 7. Solid-Electrolyte Junctions and Membrane Transport
177(34)
7.1. Electrode-Electrolyte Interfaces
177(10)
7.2. Solution of the Poisson-Boltzmann Equation under Various Boundary Conditions
187(6)
7.3. Membrane Transport
193(14)
Problems
207(1)
References
207(4)
Part 4 Devices and CAD 211(188)
Chapter 8. Metal-Oxide-Semiconductor (MOS) Structure
211(26)
8.1. MOS Structure
211(1)
8.2. Accumulation Operating Mode
212(2)
8.3. Depletion Operating Mode
214(6)
8.4. Inversion Operating Mode
220(5)
8.5. C-V Plots of an MOS Structure
225(6)
8.6. Ion Implantation for Threshold Voltage Control
231(1)
8.7. General Analysis of the MOS Structure
232(3)
Problems
235(1)
References
235(2)
Chapter 9. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
237(44)
9.1. Enhancement-Mode MOSFET
237(9)
9.2. Depletion-Mode MOSFET
246(5)
9.3. MOSFET Amplifier
251(5)
9.4. Biasing Circuits for the MOSFET
256(4)
9.5. Small-Signal Models for the MOSFET
260(6)
9.6. MOSFET-Based Operational Amplifier
266(1)
9.7. Subthreshold Operation of the MOSFET
267(7)
9.8. Contribution of Organic Chemistry to the Development of Electronic Devices
274(2)
Problems
276(4)
References
280(1)
Chapter 10. MOSFET-Based Biolectronic Devices: Biosensors
281(34)
10.1. Biosensor Overview
281(6)
10.2. Ion-Sensitive Field-Effect Transistor (ISFET)
287(7)
10.3. Enzyme Field-Effect Transistor (ENFET)
294(8)
10.4. Cell-Based Biosensors and Sensors of Cell Metabolism
302(2)
10.5. Light-Addressable Potentiometric Sensor (LAPS)
304(3)
10.6. Contributions of Microfabrication Technologies to the Field of Biosensors
307(3)
Problems
310(1)
References
311(4)
Chapter 11. Neurons and Neuronal Networks
315(36)
11.1. Short Overview of the Biology of the Neuron
315(2)
11.2. Biophysical Description of the Action Potential
317(9)
11.3. The Neuron as a Threshold Device
326(2)
11.4. Synapses
328(8)
11.5. Networks
336(2)
11.6. Neurobioengineering Neuroelectronic Junctions
338(8)
11.7. Silicon Neurons
346(2)
Problems
348(1)
References
348(3)
Chapter 12. Models of Bioelectronic Devices and Computer Simulations
351(48)
12.1. SPICE Simulator
351(1)
12.2. MOSFET Models in SPICE
352(4)
12.3. Use of SPICE for Modeling Silicon-Based Chemical Sensors
356(24)
12.4. Use of SPICE for Modeling Neurons (Excitable Membrane)
380(10)
12.5. Use of SPICE for Modeling Silicon Neurons
390(7)
References
397(2)
Appendix A. Physical Constants and Material Properties 399(2)
A.1. Physical constants 399(1)
A.2. Properties of Si, GaAs, SiO(2), Si(3)N(4), Al(2)O(3), (at 300 K) 400(1)
Appendix B. Mathematical Operators 401(4)
B.1. Vector Differential Operator (XXX) 401(1)
B.2. Laplacian Operator (XXX(2)) 402(1)
B.3. Gradient 402(1)
B.4. Divergence of a Vector Field 402(1)
B.5. Curl of a Vector Field 403(1)
B.6. Basic Relations for the Mathematical Operators 403(2)
Index 405

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